Basal Plane Sapphire Substrates

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Basal Plane Sapphire Substrates

C-plane (0001-orientation) sapphire polished substrates are used for growth of GaN and other III-V and II-VI compounds when manufacturing LED's. Other applications include infrared detectors, mercury cadmium telluride, wafer carriers and general optics.

Typical specifications for EPI polished wafers for GaN deposited LED's and other applications

C-plane (0001) orientation: ±0.25 degrees Special ±0.1 degrees
Primary flat A-axis: ±0.5 degrees Special ±0.3 degrees
Secondary flat (if required): 90 degrees CCW to Primary
Front surface: EPI polished (less than 5 Angstroms)
Back surface: Fine grind or polished

Diameter 2 in.
(50.8 mm) 		2 in.
(50.8 mm) 		3 in.
(76.2 mm)
Dia. tol. ±0.010 in. ±0.010 in. ±0.010 in.
Thickness 0.330 mm 0.430 mm 0.430 mm
Thk. tol. ±0.025 mm ±0.025 mm ±0.025 mm
Flatness 0.025 mm 0.025 mm 0.025 mm
Bow 0.025 mm 0.025 mm 0.025 mm
Taper-TTV 0.025 mm 0.025 mm 0.025 mm
Primary Flat 16 mm 16 mm 22 mm
Flat tol ±1 mm ±1 mm ±1 mm
  • sos-sapphire - R-plane sapphire for SOS silicon-on-sapphire
  • disco-dicing - Disco dicing saws and dicing blades
  • sapphire - Synthetic monocrystalline sapphire
  • dicing - Dicing wafers and substrates

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Updated: 22 Jan 2009

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